Wide Bandgap from onsemi™
Wide Bandgap technology – Enabling mega trend applications
Silicon Carbide (SiC) and gallium nitride (GaN gate driver) are the next generation materials for high performance power conversion and electric vehicles
onsemi’s next generation Wide Bandgap portfolio
The Wide Bandgap (WBG) materials will power future applications for high performance in areas such as vehicle electrification, solar and wind power, cloud computing, EV (electric vehicle) charging, 5G communications and many more. onsemi is contributing to the development of universal standards to help advance the adoption of Wide Bandgap (WBG) power technologies.
Wide Bandgap technologies provide advanced performance
- Faster switching
- Lower power losses
- Increased power density
- Higher operating temperatures
Aligned to design needs
- Higher efficiency
- Compact solutions
- Lower weight
- Reduced system cost
- Increased reliability
Applications
- Solar and wind power
- Vehicle electrification
- Motor drive
- Cloud computing
- EV charging
- 5G communication
A full portfolio
- 650V, 900V, and 1200V SiC MOSFETs
- 650V, 1200V, and 1700V SiC diodes
- SiC , GaN, and galvanically isolated high current gate drivers
- SiC power modules
- Automotive IGBTs with SiC copack diode
Diodes product family
The portfolio of Silicon Carbide (SiC) diodes from onsemi include AEC-Q101 Qualified and PPAP capable options specifically engineered and qualified for automotive and industry applications. Silicon Carbide (SiC) Schottky diodes use a completely new technology that provides superior switching performance and higher reliability to silicon.
IGBTs product family
Using the novel field stop 4th generation IGBT technology onsemi IGBT family offers optimum performance with both low conduction and switching losses for high efficiency operations in various applications.
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Modules product family
SiC modules contain SiC MOSFETs and SiC diodes. The boost modules are used in the DC-DC stages of solar inverters. These modules use SiC MOSFETs and SiC diodes with voltage ratings of 1200 V.
Si/SiC hybrid modules contain IGBTs, silicon diodes and SiC diodes. They are used in the DC-AC stages of solar inverters, energy storage systems and uninterruptible power supplies.
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MOSFETs product family
The portfolio of Silicon Carbide (SiC) MOSFETs from onsemi is designed to be fast and rugged. Silicon Carbide (SiC) MOSFETs have a 10x higher dielectric breakdown field strength, 2x higher electron saturation velocity, 3x higher energy bad gap, and 3x higher thermal conductivity.
Drivers product family
The portfolio of gate drivers from onsemi includes GaN gate driver, IGBT, FET, MOSFET, H-Bridge MOSFET, and SiC MOSFET inverting and non-inverting drivers ideal for switching applications. onsemi gate drivers provide features and benefits that include high system efficiency high reliability.
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GaN product family
The ideal performance characteristics provided by the portfolio of gate drivers from onsemi that enable them meet the requirements of specific applications include automotive power supplies, HEV/EV traction inverters, EV chargers, resonant converters, half-bridge and full-bridge converters, active clamp flyback converters, totem pole and more.
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